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Basics of ESD and TVS protection

 Step into the world of ESD and TVS protection. Get the basics and identify selection criteria parameters and protection typologies. 

In this video, featured by Electronic Engineering Journal, Tom Wolf from Nexperia and Amelia Dalton will guide you through the different parameters to enable you to determine your level

of protection required. After watching, you will be able to select the proper device for your design.

ESD: Electro-Static Discharge

Causes for electrostatic discharge: 

  • A charged person touches an integrated circuit (IC)
  • A charged IC drops on a grounded metal plate
  • A charged machine touches an IC
  • An electrostatic field is induced by high voltages. 
Electrostatic discharge can severely damage ICs: 
  • Gate Oxide (MOSFETs)
  • Metallisation (aluminium or copper tracks inside ICs)
  • PN junctions (e.g. in bipolar circuits) 
Semiconductors are getting more sensitive not less

TVS: Transient Voltage Suppression

Causes for transient voltage events: 
  • Inductive loads: Motors, Solenoids, Transformers etc. 
TVS Compared to ESD: 

  • Lower in voltage but higher in current 
  • Longer time event ( milliseconds vs nano/microseconds )
TVS events can severely damage ICs: 
  • ESD most often effects gate oxide (punch through)
  • TVS events due to longer duration cause overheating damage in PN junctions, metallisation
For more watch below video..

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